| PART |
Description |
Maker |
| PS21965-4S |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21965-4 PS21965-4A PS21965-4C PS21965-4W |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| PS21962-A PS21962-C |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21964-S |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21964-C PS21964-A |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21963-ST |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
|
Mitsubishi Electric Semiconductor
|
| PS21963-4S PS21963-4S09 |
Dual-In-Line Package Intelligent Power Module
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
|
Mitsubishi Electric Semiconductor
|
| APT6025BFLL APT6025SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 24A 0.250 Ohm
|
Advanced Power Technology, Ltd.
|
| APT6021BLL APT6021SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 600V 29A 0.210 Ohm
|
Advanced Power Technology, Ltd.
|
| APT60M60JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET
POWER MOS 7 600V 70A 0.060 Ohm
|
Advanced Power Technology, Ltd.
|
